Carl Zeiss 与 ASML 发表 Hyper-NA EUV 光刻技术论文：数值孔径至少 0.75
Hyper-NA EUV: The Next Extension Beyond High NA Lithography (Carl Zeiss, ASML)
Carl Zeiss SMT 与 ASML 的研究人员发表论文，提出数值孔径至少 0.75 的 Hyper-NA EUV 光刻方案，作为超越当前 0.55 NA High-NA 系统的路径。
Researchers at Carl Zeiss SMT and ASML published a technical paper titled “Hyper-NA: a system with a numerical aperture of at least 0.75.”
Abstract Summary:
The researchers examine Hyper-NA EUV lithography with a numerical aperture of at least 0.75 as a path beyond current 0.55-NA High-NA systems, including the optical architecture, resolution potential, reticle 3D effects, polarization, and requirements for extending the existing EUV ecosystem.
Find the technical paper here. October 2026.
Patra, Michael, Heiko Feldmann, Jens Timo Neumann, and Gerardo Bottiglieri. “Hyper-NA: a system with a numerical aperture of at least 0.75.” Journal of Micro/Nanopatterning, Materials, and Metrology 25, no. 4 (2026): 041807. https://doi.org/10.1117/1.JMM.25.4.041807
来源：Semiconductor Engineering 芯片与封装 · semiengineering.com