KAIST 等团队利用蚀刻通量实现二维半导体确定性成核
Deterministic Nucleation Enables Controlled Growth of 2D Semiconductors (KAIST, TDS, Hanyang et al.)
KAIST、TDS Innovation、汉阳大学、UNIST 等机构研究人员在 Nature 发表论文，提出通过蚀刻通量介导的二维半导体单中心成核方法，可确定性地将单个成核事件定位在指定位置。传统策略只能调控成核密度并实现区域选择性生长，无法决定单个晶核在生长区域内的具体位置。该论文于 2026 年 10 月发表，属开放获取。
Researchers at KAIST, TDS Innovation, Hanyang University, UNIST, et al. published a technical paper titled “Spatially deterministic nucleation of 2D semiconductors by etching flux.”
Abstract Excerpt:
“Nucleation control is fundamental to semiconductor deposition, governing when, where and how crystalline materials form. Conventional strategies can regulate nucleation density and, through area-selective growth, confine deposition to designated regions. However, they generally do not determine where an individual nucleus forms within the growth regions, leaving even single-nucleation events spatially stochastic and limiting deterministic construction of crystalline materials. Here we report etching-flux-mediated single-centred nucleation of two-dimensional (2D) semiconductors to deterministically localize a single nucleation event.”
Find the technical paper here. October 2026.
Park, J., Kim, J., Kang, S. et al. Spatially deterministic nucleation of 2D semiconductors by etching flux. Nature 658, 398–406 (2026). https://doi.org/10.1038/s41586-026-11095-1. Open access rights.
来源：Semiconductor Engineering 芯片与封装 · semiengineering.com