新加坡国立大学团队用单晶高κ介质实现低功耗 2D CFET
Single-Crystal High-κ Dielectric Enables Low-Power 2D CFETs (NUS et al.)
新加坡国立大学联合 Nexstrom 在 Nature 发表研究，展示晶圆级、可转移的单晶锐钛矿二氧化钛介质与 2D 过渡金属硫族化合物的范德华集成。所得近乎完美的 2D-介质界面使亚阈值摆幅接近热力学极限，n 型与 p 型增强型晶体管迟滞创纪录地低。据此实现的 CFET 反相器具备高电压增益和大噪声容限，静态功耗低于皮瓦级。
Researchers led by the National University of Singapore and Nexstrom published “Low-power 2D CFETs using single-crystal high-κ dielectrics.”
Abstract Excerpt:
“Here we demonstrate that a wafer-scale, transferable, single-crystal anatase titanium dioxide dielectric can be van der Waals integrated with 2D transition metal dichalcogenides. The obtained pristine 2D-dielectric interface enables subthreshold swing close to the thermal limit, record-low hysteresis and well-matched transfer characteristics for both n- and p-type enhancement-mode field-effect transistors. Building on this, we demonstrate complementary field-effect transistors, whose inverters achieve high voltage gain and large noise margins with subpicowatt static power consumption. These results highlight the promise of 2D semiconductors for ultra-low-power operation.”
Find the technical paper here. November 2026
Yang, Ni, Ji Zhang, Yu-Cheng Lu, et al. “Low-power 2D CFETs using single-crystal high-κ dielectrics.” Nature (2026). https://doi.org/10.1038/s41586-026-11272-2=
来源： Semiconductor Engineering 芯片与封装 · semiengineering.com