首尔国立大学团队发表亚伏特 HZO 铁电电容研究，面向类 DRAM 内存
Fast, Sub-Volt HZO Ferroelectric Capacitors For DRAM-Like Memory (SNU)
首尔国立大学领衔团队在 Nature Communications 发表论文，通过 TiN 电极与界面工程缓解铁电 Hf0.5Zr0.5O2 电容的速度与耐久矛盾，实现 0.6 V 下 42.1 ns 极化翻转、1.0 V 下 8.1 ns 翻转，0.6 V 下按 20% 极化损失标准达数千亿次开关循环，循环测试达 10^12 次双极循环且未发生硬击穿。
Seoul National University-led researchers published “Resolving the Kay–Dunn limit and the speed–endurance dilemma in ferroelectric Hf0.5Zr0.5O2 for DRAM-class sub-volt capacitors.”
The first author, Geun Hyeong Park, Ph.D., summarizes the work here:
“Fast, frequently rewritten memory requires low operating voltages, rapid switching, and high cycling endurance. In ferroelectric capacitors, however, accelerating polarization switching often requires higher voltages that can shorten device lifetime.
This work addresses this tradeoff through TiN electrode and interface engineering, reducing interfacial voltage loss and facilitating polarization reversal. Key experimental results include:
- 42.1 ns polarization switching at 0.6 V.
- 8.1 ns polarization switching at 1.0 V.
- Hundreds of billions of switching cycles at 0.6 V, using a 20% polarization-loss criterion.
Cycling tests also reached 10^12 bipolar cycles without hard electrical breakdown.
Beyond the capacitor measurements, the researchers propose a common-plate ferroelectric RAM (CP-FeRAM) architecture using one transistor and one capacitor per cell, and evaluate its readout through circuit simulations. The architecture explores polarization-based sensing after stored charge has decayed, offering a potential route to reducing refresh requirements in DRAM-like memory.”
Find the technical paper here. October 2026
Park, G.H., Jo, S., Park, S. et al. Resolving the Kay–Dunn limit and the speed–endurance dilemma in ferroelectric Hf0.5Zr0.5O2 for DRAM-class sub-volt capacitors. Nat Commun (2026). https://doi.org/10.1038/s41467-026-78705-4
Open Access.
来源： Semiconductor Engineering 芯片与封装 · semiengineering.com