HUST、港理工、UCSB、NUS 联合研究降低接触电阻，推动 2D 晶体管走向先进 CMOS
Reducing Contact Resistance Pushes 2D Transistors Toward Advanced CMOS (HUST, PolyU, UCSB, NUS)
HUST、香港理工大学、UCSB 与新加坡国立大学研究者在 Nature Communications 发表论文，通过氧 p 型掺杂制备出高性能弹道输运 WSe2 单层 p 型晶体管。该方案解决了掺杂不足和金属沉积导致的 MIGS 引起的高接触电阻问题，提升了 p 型导通电流，目标是让 2D 半导体在 sub-1nm 技术节点上超越硅、用于 CMOS 电路。
Researchers at Huazhong University of Science and Technology, Hong Kong Polytechnic University, University of California, Santa Barbara, and National University of Singapore published a technical paper titled “Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers.”
Abstract Excerpt:
“The development of high-performance p-type monolayer transistors is critical for extending two-dimensional (2D) semiconductors beyond silicon in sub 1-nm technology nodes for complementary metal–oxide–semiconductor (CMOS) circuits. However, insufficient doping and metal-induced gap states (MIGS) during metal deposition lead to high contact resistance, greatly limiting p-type on-state currents. Here, we demonstrate high-performance ballistic p-type monolayer tungsten diselenide (WSe2) transistors by oxygen p-doping. ”
Find the technical paper here. October 2026.
Sun, L., Gao, T., Xu, L. et al. Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers. Nat Commun (2026). https://doi.org/10.1038/s41467-026-78157-w
The post Reducing Contact Resistance Pushes 2D Transistors Toward Advanced CMOS (HUST, PolyU, UCSB, NUS) appeared first on Semiconductor Engineering.
来源：Semiconductor Engineering 芯片与封装 · semiengineering.com