TU Munich 与 IIT Kanpur 研究：自热效应与寄生参数制约多层 CFET 扩展
Self-Heating And Parasitics Challenge Multi-Tier CFET Scaling (TU Munich, IIT Kanpur)
TU Munich 与 IIT Kanpur 研究者在 IEEE 期刊发表论文，用经实验校准的 TCAD 模型研究自热效应及 MOL/BEOL 寄生参数对多层 CFET 设计的影响，将四层堆叠 nanosheet 的 CFET 与传统两层方案对比。
Researchers at the Technical University of Munich and Indian Institute of Technology Kanpur published “Self-Heating and Parasitic Effects in Multi-Tier CFET Design.”
Abstract Excerpt:
“We study the impact of self-heating effects (SHEs) and middle of line (MOL) and back-end of line (BEOL) induced parasitics on multi-tier CFET design, where multiple nanosheet devices are vertically stacked. We analyze and compare the four-tier complementary FET (CFET) design with the conventional two-tier CFET, using TCAD models calibrated to experimental measurements. In addition, TCAD simulations are used to model and analyze SHE-induced heat distribution and temperature profiles and to extract the detailed parasitic RC network from 3-D models of CMOS inverters designed with full MOL and BEOL interconnects.”
Find the technical paper here. June 2026
Shahin, Sufia, Mahdi Benkhelifa, Yogesh Singh Chauhan, and Hussam Amrouch. “Self-Heating and Parasitic Effects in Multi-Tier CFET Design.” IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 12 (2026): 153–158. https://doi.org/10.1109/JXCDC.2026.3704373. License.
来源： Semiconductor Engineering 芯片与封装 · semiengineering.com