[Inside the Research] In the AI era, NAND moves beyond storage to computing… 3D FeNAND co-optimization at IEEE
An SK hynix research team published a paper at the 2025 IEEE International Electron Devices Meeting (IEDM) proposing co-optimization of cell, non-cell, and page schemes to improve the energy efficiency of analog compute-in-memory (A-CiM) based on 3D FeNAND.