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#刻蚀

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Oct 15Thu
  1. Lam Research Semiconductor Manufacturing Technology36

    Lam and imec Expand Collaboration to Advance Manufacturability of Next-Gen 3D Integration Technologies, Explore Aether Dry Resist Use Cases

    Lam Research and imec are expanding their joint R&D collaboration with two new directions: advancing manufacturing readiness of 3D integration and advanced packaging, and advancing Aether® dry resist applications in imec's high-NA EUV research environment.

Sep 1Tue
Aug 26Wed
  1. Lam Research Semiconductor Manufacturing Technology24

    Virtual Fabrication Meets Stress Physics: Solving GAA Channel Non-Uniformity

    Lam Research used SEMulator3D® integrated stress modeling to predict stress non-uniformity across GAA stacked nanosheet channels before fabrication — nFET stress differences reach 400–800 MPa, while pFET stays below 200 MPa. DOE experiments show that channel thickness, fin width, and lateral etch jointly affect stress uniformity, with increasing the topmost channel thickness from 4 nm to 7 nm significantly reducing the stress difference.