碳点界面层助力 UIUC 等机构在 2D 半导体上集成超薄高 κ 介质
Carbon-Dot Interface Enables Ultrathin High-κ Dielectrics on 2D Semiconductors (UIUC, NETL, Argonne, Monash)
UIUC、NETL、Argonne 国家实验室与 Monash 大学的研究人员在 Nature Communications 发表论文，利用碳点单层组装形成原子级厚度的范德华界面层，使超薄高 κ 氧化物得以沉积在 2D 半导体上。
Researchers at the University of Illinois Urbana-Champaign, National Energy Technology Laboratory, Argonne National Laboratory, and Monash University published a technical paper titled “Integration of high-κ oxide on 2D semiconductors with carbon-dot monolayer assembly as van der Waals interfacial layer.”
Abstract Excerpt: “This atomically thin assembly forms a van der Waals interfacial layer that enables deposition of ultrathin high-κ oxides.”
Find the technical paper here. October 2026.
Wong, S., An, F., Wu, Y. et al. Integration of high-κ oxide on 2D semiconductors with carbon-dot monolayer assembly as van der Waals interfacial layer. Nat Commun 17, 10362 (2026). https://doi.org/10.1038/s41467-026-78053-3. Creative Commons License.
来源：Semiconductor Engineering 芯片与封装 · semiengineering.com