UC Berkeley、三星与 Intel 联合提出纳米机电门控增益单元嵌入式 DRAM
Nanoelectromechanical Switches Target More Efficient Embedded DRAM (UC Berkeley, Samsung, Intel)
UC Berkeley、三星电子与 Intel 的研究人员在 IEEE 期刊发表论文，提出一种纳米机电门控增益单元嵌入式 DRAM。SRAM 扩展放缓与内存墙问题让增益单元 eDRAM 重获关注，但该方案仍面临保持时间有限、寄生耦合和需要提升写入电压等挑战。
Researchers at the UC Berkeley, Samsung Electronics, and Intel published “Nanoelectromechanically Gated Gain Cell eDRAM.”
Abstract Excerpt:
“The memory wall and the slowdown of static random access memory (SRAM) scaling have renewed interest in gain-cell embedded dynamic random access memory (DRAM). While gain cells offer high density and energy efficiency, they suffer from limited retention, parasitic coupling, and the need for boosted write voltages. This work introduces a nanoelectromechanically gated gain cell for embedded DRAM. ”
Find the technical paper here. October 2026
Finnan, Collin P., Choong-Ho Rhee, Tahir Ghani, and Tsu-Jae King-Liu. “Nanoelectromechanically Gated Gain Cell eDRAM.” IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (2026): 223–230. https://doi.org/10.1109/JXCDC.2026.3717204. Open Access license.
来源： Semiconductor Engineering 芯片与封装 · semiengineering.com