Carbon-Dot Interface Enables Ultrathin High-κ Dielectrics on 2D Semiconductors (UIUC, NETL, Argonne, Monash)
Carbon-Dot Interface Enables Ultrathin High-κ Dielectrics on 2D Semiconductors (UIUC, NETL, Argonne, Monash)
Researchers from UIUC, NETL, Argonne National Laboratory and Monash University published a paper in Nature Communications using monolayer-assembled carbon dots to form an atomically thin van der Waals interface layer, enabling ultrathin high-κ oxides to be deposited on 2D semiconductors.
Researchers at the University of Illinois Urbana-Champaign, National Energy Technology Laboratory, Argonne National Laboratory, and Monash University published a technical paper titled “Integration of high-κ oxide on 2D semiconductors with carbon-dot monolayer assembly as van der Waals interfacial layer.”
Abstract Excerpt: “This atomically thin assembly forms a van der Waals interfacial layer that enables deposition of ultrathin high-κ oxides.”
Find the technical paper here. October 2026.
Wong, S., An, F., Wu, Y. et al. Integration of high-κ oxide on 2D semiconductors with carbon-dot monolayer assembly as van der Waals interfacial layer. Nat Commun 17, 10362 (2026). https://doi.org/10.1038/s41467-026-78053-3. Creative Commons License.
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