Carbon Dot Interface Layer Enables Ultrathin High-κ Oxide Integration on 2D Semiconductors
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On October 13, 2026, Semiconductor Engineering reported that researchers from the University of Illinois Urbana-Champaign (UIUC), the National Energy Technology Laboratory (NETL), Argonne National Laboratory, and Monash University in Australia published a paper in Nature Communications. The research uses carbon dot monolayer assemblies to form atomically thin van der Waals interfacial layers; with this interfacial layer, ultrathin high-κ oxides can be deposited on 2D semiconductors, offering a new path for dielectric integration on 2D semiconductors.
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- Semiconductor Engineering Chips and PackagingCarbon-Dot Interface Enables Ultrathin High-κ Dielectrics on 2D Semiconductors (UIUC, NETL, Argonne, Monash)
Researchers from UIUC, NETL, Argonne National Laboratory and Monash University published a paper in Nature Communications using monolayer-assembled carbon dots to form an atomically thin van der Waals interface layer, enabling ultrathin high-κ oxides to be deposited on 2D semiconductors.
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