Single-Crystal High-κ Dielectric Enables Low-Power 2D CFETs (NUS et al.)
Single-Crystal High-κ Dielectric Enables Low-Power 2D CFETs (NUS et al.)
A National University of Singapore team, together with Nexstrom, published research in Nature demonstrating wafer-scale, transferable single-crystal anatase titanium dioxide dielectrics integrated via van der Waals bonding with 2D transition metal dichalcogenides. The resulting nearly perfect 2D-dielectric interface brings subthreshold swing close to the thermodynamic limit, with record-low hysteresis in n-type and p-type enhancement-mode transistors. CFET inverters built on this achieve high voltage gain and large noise margins, with static power consumption below the picowatt level.
Researchers led by the National University of Singapore and Nexstrom published “Low-power 2D CFETs using single-crystal high-κ dielectrics.”
Abstract Excerpt:
“Here we demonstrate that a wafer-scale, transferable, single-crystal anatase titanium dioxide dielectric can be van der Waals integrated with 2D transition metal dichalcogenides. The obtained pristine 2D-dielectric interface enables subthreshold swing close to the thermal limit, record-low hysteresis and well-matched transfer characteristics for both n- and p-type enhancement-mode field-effect transistors. Building on this, we demonstrate complementary field-effect transistors, whose inverters achieve high voltage gain and large noise margins with subpicowatt static power consumption. These results highlight the promise of 2D semiconductors for ultra-low-power operation.”
Find the technical paper here. November 2026
Yang, Ni, Ji Zhang, Yu-Cheng Lu, et al. “Low-power 2D CFETs using single-crystal high-κ dielectrics.” Nature (2026). https://doi.org/10.1038/s41586-026-11272-2=
Source: Semiconductor Engineering Chips and Packaging · semiengineering.com