NUS Team Achieves Single-Crystal High-κ Dielectric 2D CFET
Understand the story
The National University of Singapore, together with Nexstrom, published research in Nature demonstrating wafer-scale, transferable single-crystal anatase titanium dioxide dielectrics van der Waals integrated with 2D transition metal dichalcogenides. Thanks to a nearly perfect 2D-dielectric interface, devices achieve subthreshold swing close to the thermodynamic limit, and n-type and p-type enhancement-mode transistors reach record-low hysteresis. A CFET inverter built on this technology delivers high voltage gain and large noise margin, with static power consumption below the picowatt level, offering a new technical path for low-power 2D transistor integration.
AI overview of reporting · Updated 3 h前
Reporting timeline
Explore different aspects of the story through its reporting.
- Semiconductor Engineering Chips and PackagingSingle-Crystal High-κ Dielectric Enables Low-Power 2D CFETs (NUS et al.)
A National University of Singapore team, together with Nexstrom, published research in Nature demonstrating wafer-scale, transferable single-crystal anatase titanium dioxide dielectrics integrated via van der Waals bonding with 2D transition metal dichalcogenides. The resulting nearly perfect 2D-dielectric interface brings subthreshold swing close to the thermodynamic limit, with record-low hysteresis in n-type and p-type enhancement-mode transistors. CFET inverters built on this achieve high voltage gain and large noise margins, with static power consumption below the picowatt level.
Story heat trend
Current heat9·Comparable peak10（11/12 10:00）·Comparable change over 24 hours –
The trend compares the same continuously observed sources, which may cover fewer sources than the current heat score. Hover or select the chart to inspect each hour; use the left and right arrow keys to navigate.