Fast, Sub-Volt HZO Ferroelectric Capacitors For DRAM-Like Memory (SNU)

Seoul National University-led researchers published “Resolving the Kay–Dunn limit and the speed–endurance dilemma in ferroelectric Hf_0.5Zr_0.5O₂ for DRAM-class sub-volt capacitors.”

The first author, Geun Hyeong Park, Ph.D., summarizes the work here:

“Fast, frequently rewritten memory requires low operating voltages, rapid switching, and high cycling endurance. In ferroelectric capacitors, however, accelerating polarization switching often requires higher voltages that can shorten device lifetime.

This work addresses this tradeoff through TiN electrode and interface engineering, reducing interfacial voltage loss and facilitating polarization reversal. Key experimental results include:

• 42.1 ns polarization switching at 0.6 V.
• 8.1 ns polarization switching at 1.0 V.
• Hundreds of billions of switching cycles at 0.6 V, using a 20% polarization-loss criterion.

Cycling tests also reached 10^12 bipolar cycles without hard electrical breakdown.

Beyond the capacitor measurements, the researchers propose a common-plate ferroelectric RAM (CP-FeRAM) architecture using one transistor and one capacitor per cell, and evaluate its readout through circuit simulations. The architecture explores polarization-based sensing after stored charge has decayed, offering a potential route to reducing refresh requirements in DRAM-like memory.”

Find the technical paper here. October 2026

Park, G.H., Jo, S., Park, S. et al. Resolving the Kay–Dunn limit and the speed–endurance dilemma in ferroelectric Hf0.5Zr0.5O2 for DRAM-class sub-volt capacitors. Nat Commun (2026). https://doi.org/10.1038/s41467-026-78705-4
Open Access.