SNU Team Breaks Speed and Endurance Limits of HZO Ferroelectric Capacitors
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A team led by Seoul National University published a paper in Nature Communications on sub-volt HZO (Hf0.5Zr0.5O2) ferroelectric capacitors for DRAM-like memory. Ferroelectric HZO capacitors have long suffered from a trade-off between speed and endurance; the team mitigated this problem through TiN electrodes and interface engineering. The results show that the capacitor achieves 42.1 ns polarization switching at 0.6 V and 8.1 ns switching at 1.0 V. In terms of endurance, it reached hundreds of billions of switching cycles at 0.6 V under a 20% polarization loss criterion, with cycling tests reaching 10^12 bipolar cycles without hard breakdown. This result demonstrates the feasibility of low-voltage, high-speed, high-endurance DRAM-like ferroelectric memory.
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- Semiconductor Engineering Chips and PackagingFast, Sub-Volt HZO Ferroelectric Capacitors For DRAM-Like Memory (SNU)
A Seoul National University-led team published a paper in Nature Communications showing that TiN electrodes and interface engineering ease the speed-endurance trade-off of ferroelectric Hf0.5Zr0.5O2 capacitors, achieving 42.1 ns polarization switching at 0.6 V and 8.1 ns at 1.0 V, hundreds of billions of switching cycles at 0.6 V under a 20% polarization loss criterion, with cycling tests reaching 10^12 bipolar cycles without hard breakdown.
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