Reducing Contact Resistance Pushes 2D Transistors Toward Advanced CMOS (HUST, PolyU, UCSB, NUS)
Reducing Contact Resistance Pushes 2D Transistors Toward Advanced CMOS (HUST, PolyU, UCSB, NUS)
Researchers from HUST, Hong Kong Polytechnic University, UCSB, and the National University of Singapore published a Nature Communications paper demonstrating high-performance ballistic-transport WSe2 monolayer p-type transistors via oxygen p-type doping. The approach solves insufficient doping and high contact resistance caused by MIGS from metal deposition, boosting p-type on-current, aiming to let 2D semiconductors surpass silicon at sub-1nm nodes for CMOS circuits.
Researchers at Huazhong University of Science and Technology, Hong Kong Polytechnic University, University of California, Santa Barbara, and National University of Singapore published a technical paper titled “Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers.”
Abstract Excerpt:
“The development of high-performance p-type monolayer transistors is critical for extending two-dimensional (2D) semiconductors beyond silicon in sub 1-nm technology nodes for complementary metal–oxide–semiconductor (CMOS) circuits. However, insufficient doping and metal-induced gap states (MIGS) during metal deposition lead to high contact resistance, greatly limiting p-type on-state currents. Here, we demonstrate high-performance ballistic p-type monolayer tungsten diselenide (WSe2) transistors by oxygen p-doping. ”
Find the technical paper here. October 2026.
Sun, L., Gao, T., Xu, L. et al. Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers. Nat Commun (2026). https://doi.org/10.1038/s41467-026-78157-w
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