Oxygen-Doped WSe2 Reduces Contact Resistance, Advancing 2D Transistors
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On October 6, 2026, Semiconductor Engineering reported that researchers from Huazhong University of Science and Technology, The Hong Kong Polytechnic University, UC Santa Barbara, and the National University of Singapore published a paper in Nature Communications on jointly reducing contact resistance to advance 2D transistors toward advanced CMOS. Using oxygen p-type doping, the team fabricated high-performance WSe2 monolayer p-type transistors with ballistic transport. The approach solves two key problems: insufficient doping, and the high contact resistance caused by metal-induced gap states (MIGS) at the metal-semiconductor interface from metal deposition, thereby increasing p-type on-current. The research aims to let 2D semiconductors surpass silicon at the sub-1nm technology node for use in CMOS circuits.
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- Semiconductor Engineering Chips and PackagingReducing Contact Resistance Pushes 2D Transistors Toward Advanced CMOS (HUST, PolyU, UCSB, NUS)
Researchers from HUST, Hong Kong Polytechnic University, UCSB, and the National University of Singapore published a Nature Communications paper demonstrating high-performance ballistic-transport WSe2 monolayer p-type transistors via oxygen p-type doping. The approach solves insufficient doping and high contact resistance caused by MIGS from metal deposition, boosting p-type on-current, aiming to let 2D semiconductors surpass silicon at sub-1nm nodes for CMOS circuits.