Deterministic Nucleation Enables Controlled Growth of 2D Semiconductors (KAIST, TDS, Hanyang et al.)
Researchers from KAIST, TDS Innovation, Hanyang University, UNIST and other institutions published a paper in Nature proposing an etching-flux-mediated single-nucleus nucleation method for 2D semiconductors that deterministically positions a single nucleation event at a designated location. Conventional strategies can only control nucleation density and achieve area-selective growth, but cannot determine where an individual nucleus lands within the growth area. Published in October 2026, the paper is open access.