ASML and Zeiss Propose Hyper-NA EUV Lithography Solution
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On October 8, 2026, Semiconductor Engineering reported that researchers from Carl Zeiss SMT and ASML jointly published a paper proposing a Hyper-NA EUV lithography scheme with a numerical aperture of at least 0.75. The scheme is positioned as a technology path beyond the current 0.55 NA High-NA EUV systems. There is only one report on this matter so far, with no further information on prototype progress, mass production timing, or customer deployment.
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- Semiconductor Engineering Chips and PackagingHyper-NA EUV: The Next Extension Beyond High NA Lithography (Carl Zeiss, ASML)
Researchers at Carl Zeiss SMT and ASML published a paper proposing a Hyper-NA EUV lithography scheme with a numerical aperture of at least 0.75, as a path beyond today's 0.55 NA High-NA systems.