Dry-Deposited ZIF Photoresist Shows Different Tone Switching Under EUV vs. Electron-Beam Exposure
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In a report dated October 26, 2026, researchers from KU Leuven, Kunsan National University, Vrije Universiteit Brussel and imec, among others, published a paper in ACS Applied Materials & Interfaces describing a halogenated amorphous zeolitic imidazolate framework (a-ZIF) metal-organic photoresist deposited entirely via dry deposition. The photoresist can be used in advanced patterning processes for next-generation semiconductor manufacturing, exhibiting pronounced irradiation-source-dependent tone switching behavior under both electron-beam and EUV exposure.
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- Semiconductor Engineering Chips and PackagingDry-Deposited Resist Shows Different Tone Behavior Under EUV And E-Beam Exposure (KU Leuven, Kunsan, VUB, Imec)
Researchers from KU Leuven, Kunsan National University, Vrije Universiteit Brussel and imec, among other institutions, have published a paper in ACS Applied Materials & Interfaces reporting a fully dry-deposited halogenated amorphous zeolitic imidazolate framework (a-ZIF) metal-organic photoresist for advanced patterning in next-generation semiconductor manufacturing. The resist exhibits pronounced, exposure-source-dependent tone-switching behavior under both electron-beam and EUV exposure.
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