Characterization of HBM Power Consumption (ETH Zurich, NYU)
Researchers from ETH Zurich and NYU published a paper presenting the first comprehensive experimental characterization of power consumption on real HBM2 DRAM chips, with 13 new findings and 6 key conclusions. Read operations draw significantly more current than other operations, and flipping all bank group bus signals increases power by 29.4% over holding them constant. Based on this, the team constructed access patterns that on average consume 23.6% more power than the JEDEC-specified maximum power measurement loop across 36 tested HBM2 chips.