SNU and Yonsei University Publish Paper on 3D Memristor-TFT Reservoir Computing
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On October 7, 2026, Semiconductor Engineering reported that a research team from Seoul National University and Yonsei University published a paper in Nature Communications proposing a memristor–thin-film transistor (TFT) reservoir computing kernel for monolithic 3D integration. The structure vertically integrates a Ru/HfO2/TiN memristor with an In2O3-channel TFT, using the TFT to electrically modulate the memristor and tune its memristive conductance dynamics, thereby achieving programmable temporal dynamics across a wide range of timescales. According to the report, this approach overcomes the limitations of fixed or narrowly tunable dynamics in most hardware reservoir computing systems. No follow-up progress has been reported.
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- Semiconductor Engineering Chips and PackagingMonolithic 3D Memristor-TFT Stack For Programmable Neuromorphic Computing (SNU, Yonsei)
A research team from Seoul National University and Yonsei University published a paper in Nature Communications proposing a monolithically 3D-integrated memristor-thin-film transistor (TFT) reservoir computing kernel. The structure vertically integrates Ru/HfO2/TiN memristors with In2O3 channel TFTs, using the TFTs to electrically modulate memristive conductance dynamics to achieve programmable temporal dynamics over wide timescales, overcoming the fixed dynamics or narrow tuning ranges of most hardware reservoirs.