Study Uses Simulation to Locate GAAFET Leakage Paths
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On October 15, 2026, Semiconductor Engineering reported that researchers from Sandia National Laboratories and the Luxembourg Institute of Science and Technology published a paper that spatially resolves the leakage current paths of GAAFETs (gate-all-around field-effect transistors) using charge-self-consistent Non-Equilibrium Green's Function simulations based on the Contact Block Reduction method. The work belongs to device physics research in the chips and packaging field, aiming to use first-principles simulation to locate sources of leakage, providing tools and methods for analyzing leakage issues in GAAFET devices. There have been no reports of follow-up progress or real-world applications.
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- Semiconductor Engineering Chips and PackagingSimulations Pinpoint Leakage Pathway In GAAFETs (Sandia, Luxembourg)
Researchers from Sandia National Laboratories and the Luxembourg Institute of Science and Technology published a paper that spatially resolves GAAFET leakage pathways using charge self-consistent Non-Equilibrium Green Function simulations based on the Contact Block Reduction method.
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