SK hynix Publishes Joint Optimization Research on 3D FeNAND Compute-in-Memory
Understand the story
On October 14, 2026, SK hynix announced that its research team published a paper at the 2025 IEEE International Electron Devices Meeting (IEDM), proposing a co-optimization scheme for analog compute-in-memory (A-CiM) based on 3D FeNAND. The research jointly optimizes cell, non-cell, and page scheme elements to improve A-CiM energy efficiency. This is a research publication from SK hynix in the compute-in-memory (CiM) direction; the report covers only the paper itself, with no news yet of subsequent industrialization or mass production.
AI overview of reporting · Updated 4 days ago
Reporting timeline
Explore different aspects of the story through its reporting.
- SK hynix Memory Technology[Inside the Research] In the AI era, NAND moves beyond storage to computing… 3D FeNAND co-optimization at IEEE
An SK hynix research team published a paper at the 2025 IEEE International Electron Devices Meeting (IEDM) proposing co-optimization of cell, non-cell, and page schemes to improve the energy efficiency of analog compute-in-memory (A-CiM) based on 3D FeNAND.
Story heat trend
Current heat3·Comparable peak10（10/14 09:00）·Comparable change over 24 hours -50%
The trend compares the same continuously observed sources, which may cover fewer sources than the current heat score. Hover or select the chart to inspect each hour; use the left and right arrow keys to navigate.