KAIST and Others Publish Paper on Deterministic Nucleation of 2D Semiconductors
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Researchers from KAIST, TDS Innovation, Hanyang University, UNIST, and other institutions published a paper in Nature proposing an etching-flux-mediated single-center nucleation method for 2D semiconductors, which can deterministically localize a single nucleation event at a designated position. Traditional strategies can only control nucleation density and achieve area-selective growth, but cannot determine the specific location of an individual nucleus within the growth region. The paper was published in October 2026 and is open access. No further developments have been reported.
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- Semiconductor Engineering Chips and PackagingDeterministic Nucleation Enables Controlled Growth of 2D Semiconductors (KAIST, TDS, Hanyang et al.)
Researchers from KAIST, TDS Innovation, Hanyang University, UNIST and other institutions published a paper in Nature proposing an etching-flux-mediated single-nucleus nucleation method for 2D semiconductors that deterministically positions a single nucleation event at a designated location. Conventional strategies can only control nucleation density and achieve area-selective growth, but cannot determine where an individual nucleus lands within the growth area. Published in October 2026, the paper is open access.
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